功　 能：

• 各种金属薄膜的溅射蒸镀
  Deposition of metal films
• 各种金属、非金属化合物薄膜的溅射沉积
  Deposition of metal and non-metal compound films

  主要配置：

• 载片(Wafers)：直径小于100mm的各种基片(up to 100 mm wafers)
• 气体(Gas lines)：Ar、O2、N2
• 靶源(Magnetron sputtering sources)：四个2吋标准磁控靶，功率200W (Four 2 - inch standard strength，power 200W)
• 样品台转速及温度范围(Rotating speed of and temperature range of the sample stage)：最高转速30 rmp，室温至500 ℃ (Up to 30 rmp, and room temperature up to 500 ℃)
• 薄膜不均匀度(Nonuniformity)：＜ 5%

  技术特点：

• 薄膜共溅射沉积
  Co-deposition of films capability
• 各种氮化物和氧化物薄膜反应溅射沉积
  Deposition of nitrides and oxides films by reaction capability